DocumentCode
1225561
Title
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology
Author
Trotta, Saverio ; Knapp, Herbert ; Aufinger, Klaus ; Meister, Thomas F. ; Böck, Josef ; Dehlink, Bernhard ; Simbürger, Werner ; Scholtz, Arpad L.
Author_Institution
Freescale Semicond. GmbH, Munich
Volume
42
Issue
10
fYear
2007
Firstpage
2099
Lastpage
2106
Abstract
This paper reports on the design, fabrication, and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The resulting gain bandwidth product (GBW) is more than 840 GHz. The amplifier consumes a power of 990 mW at a supply of -5.5 V.
Keywords
Ge-Si alloys; bipolar analogue integrated circuits; integrated circuit design; millimetre wave amplifiers; wideband amplifiers; SiGe; SiGe - Binary; bandwidth 84 GHz; bipolar technology; gain 20 dB; gain bandwidth product; lumped broadband amplifier; power 990 mW; voltage -5.5 V; Bandwidth; Broadband amplifiers; Capacitance; Differential amplifiers; Gain; Germanium silicon alloys; Paper technology; Silicon germanium; Transfer functions; Voltage; Broadband amplifier; SiGe;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2007.905227
Filename
4317715
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