Title :
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology
Author :
Trotta, Saverio ; Knapp, Herbert ; Aufinger, Klaus ; Meister, Thomas F. ; Böck, Josef ; Dehlink, Bernhard ; Simbürger, Werner ; Scholtz, Arpad L.
Author_Institution :
Freescale Semicond. GmbH, Munich
Abstract :
This paper reports on the design, fabrication, and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The resulting gain bandwidth product (GBW) is more than 840 GHz. The amplifier consumes a power of 990 mW at a supply of -5.5 V.
Keywords :
Ge-Si alloys; bipolar analogue integrated circuits; integrated circuit design; millimetre wave amplifiers; wideband amplifiers; SiGe; SiGe - Binary; bandwidth 84 GHz; bipolar technology; gain 20 dB; gain bandwidth product; lumped broadband amplifier; power 990 mW; voltage -5.5 V; Bandwidth; Broadband amplifiers; Capacitance; Differential amplifiers; Gain; Germanium silicon alloys; Paper technology; Silicon germanium; Transfer functions; Voltage; Broadband amplifier; SiGe;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.905227
