Electronic structure calculation of GaSb/GaAs quantum dot

Author

Kiravittaya, Suwit ; Kunrugsa, Maetee ; Thainoi, Supachok ; Ratanathammaphan, Somchai ; Panyakeow, Somsak

Author_Institution

Dept. of Electr. & Comput. Eng., Naresuan Univ., Phitsanulok, Thailand

fYear

2014

fDate

19-21 March 2014

Firstpage

1

Lastpage

4

Abstract

The paper describes a method to calculate electronic band structure, carrier wave function and quantized energies of dome-shaped GaSb/GaAs quantum dot (QD) structure. Type-II band alignment of GaSb/GaAs is introduced. Then, fabrication of realistic GaSb/GaAs QDs by molecular beam epitaxy is described. Based on the structural information obtained from realistic QD, finite element analysis of strain in and around QD is performed. Strain-induced bandgap modification is considered for calculating the discrete energy levels in QD. Effects of QD height and diameter variation are quantified.

Keywords

III-V semiconductors; energy gap; finite element analysis; gallium arsenide; gallium compounds; molecular beam epitaxial growth; nanofabrication; nanostructured materials; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; wave functions; GaSb-GaAs; carrier wave function; discrete energy level; dome-shaped gallium antimonide-gallium arsenide quantum dot structure; electronic band structure; finite element analysis; molecular beam epitaxy; nanostructured material; quantized energy; strain-induced band gap modification; structural properties; type-II band alignment; Epitaxial growth; Gallium arsenide; Joining processes; Substrates; Electronic Wave Function; Finite Element Analysis; GaSb/GaAs; Quantized Energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering Congress (iEECON), 2014 International

Conference_Location

Chonburi

Type

conf

DOI

10.1109/iEECON.2014.6925841

Filename

6925841