DocumentCode :
1225848
Title :
Bipolar and Unipolar Resistive Switching in Cu-Doped SiO2
Author :
Schindler, Christina ; Thermadam, Sarath Chandran Puthen ; Waser, Rainer ; Kozicki, Michael N.
Author_Institution :
Arizona State Univ., Tempe
Volume :
54
Issue :
10
fYear :
2007
Firstpage :
2762
Lastpage :
2768
Abstract :
Scalable nonvolatile memory devices that operate at low voltage and current, exhibit multilevel cell capability, and can be read nondestructively using simple circuitry, are highly sought after. Such devices are of particular interest if they are compatible with back-end-of-line processing for CMOS integrated circuits. A variety of resistance-change technologies show promise in this respect, but a new approach that is based on switching in copper-doped silicon dioxide may be the simplest and least expensive to integrate. This paper describes the characteristics of W-(Cu/SiO2)-Cu programmable metallization cell (PMC) devices formed by the thermal diffusion of Cu into deposited SiO2. PMC devices operate by the electrochemical control of metallic pathways in solid electrolytes. Both unipolar and bipolar resistive switching could be attained in these devices. Bipolar switching, which is identical to that seen in PMC devices based on other solid electrolytes, was observed for low bias (a few tenths of volts) and programming currents in the microampere range. The resistance ratio between high and low states was on the order of 103, and a multibit storage is considered possible via the strong dependence of ON-state resistance on programming current. The low and high resistance states were stable for more than 5 x 104 s. The devices could be made to exhibit unipolar switching using a negative bias on the order of -1 V combined with erase currents of hundreds of microampere to a few milliampere. In this case, the OFF/ON ratio was 106.
Keywords :
CMOS memory circuits; copper; integrated circuit metallisation; low-power electronics; oxygen compounds; programmable circuits; semiconductor doping; silicon compounds; switching; thermal diffusion; CMOS integrated circuits; Cu-SiO2 - Interface; back-end-of-line processing; bipolar resistive switching; copper-doped silicon dioxide; electrochemical control; low current; low voltage; metallic pathways; multilevel cell capability; programmable metallization cell devices; resistance-change technologies; scalable nonvolatile memory devices; simple circuitry; solid electrolytes; thermal diffusion; unipolar resistive switching; CMOS integrated circuits; CMOS technology; Glass; Information technology; Integrated circuit technology; Low voltage; Metallization; Nonvolatile memory; Silicon compounds; Solid state circuits; Electrical switching; nonvolatile memory; silicon oxide; solid electrolytes;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.904402
Filename :
4317748
Link To Document :
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