Title :
Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors
Author :
MacDougal, M.H. ; Gye Mo Yang ; Bond, A.E. ; Chao-Kun Lin ; Tishinin, D. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
We have fabricated the first electrically-pumped vertical-cavity surface-emitting lasers (VCSELs) which use oxide-based distributed Bragg reflectors (DBRs) on both sides of the gain region. They require a third the epitaxial growth time of VCSELs with semiconductor DBRs. We obtain threshold currents as low as 160 μA in VCSELs with an active area of 8 μm×8 μm using a two quantum well InGaAs-GaAs active region. By etching away mirror pairs from the top reflector, quantum efficiencies as high as 61% are attained, while still maintaining a low threshold current of 290 μA.
Keywords :
III-V semiconductors; distributed feedback lasers; epitaxial growth; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; quantum well lasers; semiconductor growth; surface emitting lasers; 160 muA; 290 muA; 61 percent; 8 mum; Al/sub x/O/sub y/-GaAs reflectors; AlO; InGaAs-GaAs; active area; electrically-pumped vertical-cavity lasers; electrically-pumped vertical-cavity surface-emitting lasers; epitaxial growth time; gain region; low threshold current; mirror pair etching; oxide-based distributed Bragg reflectors; quantum efficiencies; quantum well InGaAs-GaAs active region; semiconductor DBR; threshold currents; top reflector; Distributed Bragg reflectors; Epitaxial growth; Fiber lasers; Gallium arsenide; Mirrors; Optical surface waves; Reflectivity; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
