Title :
Gain, refractive index, and /spl alpha/-parameter in InGaAs-GaAs SQW broad-area lasers
Author :
Bossert, David J. ; Gallant, David
Author_Institution :
US Air Force Phillips Lab., Kirtland AFB, NM, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
Gain, refractive index, and the linewidth enhancement factor, or /spl alpha/-parameter, are measured in broad-area InGaAs-GaAs single-quantum-well semiconductor lasers using below-threshold amplified spontaneous emission spectra and a far-field filtering technique. The /spl alpha/ parameter is shown to increase dramatically with increasing carrier density and wavelength. Modes propagating in the transparent substrate of the lasers are shown to have a significant influence on the measured value of /spl alpha/.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser modes; quantum well lasers; refractive index; spectral line breadth; superradiance; /spl alpha/-parameter; InGaAs-GaAs; InGaAs-GaAs SQW broad-area lasers; below-threshold amplified spontaneous emission spectra; broad-area InGaAs-GaAs single-quantum-well semiconductor lasers; carrier density; far-field filtering technique; gain; linewidth enhancement factor; modes; refractive index; transparent substrate; wavelength; Charge carrier density; Filtering; Gain measurement; Laser modes; Optical propagation; Refractive index; Semiconductor lasers; Spontaneous emission; Substrates; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE