DocumentCode :
1225941
Title :
A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration
Author :
Wei, Xiaoyun ; Niu, Guofu ; Sweeney, Susan L. ; Liang, Qingqing ; Wang, Xudong ; Taylor, Stewart S.
Author_Institution :
Auburn Univ., Auburn
Volume :
54
Issue :
10
fYear :
2007
Firstpage :
2706
Lastpage :
2714
Abstract :
This paper presents a general 4-port algorithm that can remove on-wafer parasitics from on-wafer measurements after impedance standard substrate (ISS) calibration of system errors, or remove both system errors and on-wafer parasitics in a single step without ISS calibration. On-wafer standards are fabricated on a 0.13 RF CMOS process, and experimental data are measured from 2 to 110 GHz using an HP 8510XF system. The impact of nonideal on-wafer load standards is examined using the deembedded transistor-parameters and the extracted small signal parameters. The errors remaining after the traditional open-short deembedding are numerically evaluated, which become significant above 50 GHz. The solved 4-port network for on-wafer parasitics is indeed reciprocal despite the assumptions of ideal OPEN and SHORT, thus allowing a mathematically simpler reciprocal 4-port solution. The general 4-port solution can also be directly applied to the measured raw S-parameters to remove both system errors and on-wafer parasitics in a single step. Single-step calibration leads to reasonably accurate transistor -parameters, despite the less accurate on-wafer standards compared to precision ISS standards.
Keywords :
CMOS integrated circuits; calibration; field effect MIMIC; integrated circuit measurement; substrates; wafer-scale integration; 4-port network; HP 8510XF system; RF CMOS process; deembedded transistor-parameters; frequency 110 GHz; impedance standard substrate calibration; nonideal on-wafer load standards; on-wafer parasitics; on-wafer transistor measurements; single-step calibration; size 0.13 nm; CMOS process; Calibration; Equivalent circuits; Impedance measurement; Integrated circuit measurements; Measurement standards; Microelectronics; Microwave transistors; Radio frequency; Scattering parameters; 4-port network; Calibration; RF CMOS; deembedding; error correction; microwave on-wafer measurements; on-wafer parasitics; scattering parameters;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.904362
Filename :
4317757
Link To Document :
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