• DocumentCode
    1225941
  • Title

    A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration

  • Author

    Wei, Xiaoyun ; Niu, Guofu ; Sweeney, Susan L. ; Liang, Qingqing ; Wang, Xudong ; Taylor, Stewart S.

  • Author_Institution
    Auburn Univ., Auburn
  • Volume
    54
  • Issue
    10
  • fYear
    2007
  • Firstpage
    2706
  • Lastpage
    2714
  • Abstract
    This paper presents a general 4-port algorithm that can remove on-wafer parasitics from on-wafer measurements after impedance standard substrate (ISS) calibration of system errors, or remove both system errors and on-wafer parasitics in a single step without ISS calibration. On-wafer standards are fabricated on a 0.13 RF CMOS process, and experimental data are measured from 2 to 110 GHz using an HP 8510XF system. The impact of nonideal on-wafer load standards is examined using the deembedded transistor-parameters and the extracted small signal parameters. The errors remaining after the traditional open-short deembedding are numerically evaluated, which become significant above 50 GHz. The solved 4-port network for on-wafer parasitics is indeed reciprocal despite the assumptions of ideal OPEN and SHORT, thus allowing a mathematically simpler reciprocal 4-port solution. The general 4-port solution can also be directly applied to the measured raw S-parameters to remove both system errors and on-wafer parasitics in a single step. Single-step calibration leads to reasonably accurate transistor -parameters, despite the less accurate on-wafer standards compared to precision ISS standards.
  • Keywords
    CMOS integrated circuits; calibration; field effect MIMIC; integrated circuit measurement; substrates; wafer-scale integration; 4-port network; HP 8510XF system; RF CMOS process; deembedded transistor-parameters; frequency 110 GHz; impedance standard substrate calibration; nonideal on-wafer load standards; on-wafer parasitics; on-wafer transistor measurements; single-step calibration; size 0.13 nm; CMOS process; Calibration; Equivalent circuits; Impedance measurement; Integrated circuit measurements; Measurement standards; Microelectronics; Microwave transistors; Radio frequency; Scattering parameters; 4-port network; Calibration; RF CMOS; deembedding; error correction; microwave on-wafer measurements; on-wafer parasitics; scattering parameters;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2007.904362
  • Filename
    4317757