Title :
A Novel 1200-V LDMOSFET With Floating Buried Layer in Substrate
Author :
Cheng, Jianbing ; Zhang, Bo ; Li, Zhaoji
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu
fDate :
6/1/2008 12:00:00 AM
Abstract :
A novel 2-mum thin-drift-layer power MOSFET with an n-type floating buried layer (FBL) in substrate is proposed in this letter. Since the charges in the buried layer modulate the bulk electric field, a nearly uniform electric field is obtained, and the vertical breakdown voltage (BV) is significantly improved. Simulation results show that the BV of the proposed FBL lateral double-diffused MOSFET (LDMOSFET) is increased from 743 V of the conventional LDMOSFET to 1332 V with the same 100 mum drift region length. Furthermore, the figure-of-merit of the FBL-LDMOSFET is better than that of the conventional LDMOSFET.
Keywords :
buried layers; electric breakdown; electric fields; power MOSFET; substrates; bulk electric field; double-diffused MOSFET; figure-of-merit; floating buried layer; thin-drift-layer power MOSFET; vertical breakdown voltage; voltage 743 V to 1332 V; Analog integrated circuits; Circuit simulation; Doping; MOSFET circuits; Medical simulation; Power MOSFET; Power integrated circuits; Substrates; Thin film circuits; Voltage; Figure-of-merit (FOM); floating buried layer (FBL); power MOSFET; vertical breakdown voltage $(BV)$;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.922731
