DocumentCode :
1226154
Title :
High- 
and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF
Author :
Royer, C. Le ; Vincent, B. ; Clavelier, L. ; Damlencourt, J.F. ; Tabone, C. ; Batude, P. ; Blachier, D. ; Truche, R. ; Campidelli, Y. ; Nguyen, Q.T. ; Cristoloveanu, S. ; Soliveres, S. ; Carval, G. Le ; Boulanger, F. ; Billon, T. ; Bensahel, D. ; Deleonib
Author_Institution :
Electron. & Inf. Technol. Lab., French Atomic Energy Comm. (CEA-LETI)/Minatec, Grenoble
Volume :
29
Issue :
6
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
635
Lastpage :
637
Abstract :
For the first time, we report high-kappa/metal-gate pMOSFETs fabricated on high-quality 200-mm germanium-on-insulator (GeOI) wafers obtained by the Ge enrichment technique. The highest mobility peak (200 cm2/V.s) and driving current (ION= 115 muA/ mum at VG - Vth = -0.8 V and VDS = -1.2 V, for L = 0.5 mum) have been demonstrated for GeOI HfO2/TiN pMOSFETs on Ge layers as thin as 50 nm. As compared to silicon-on-insulator control devices, 2times enhancement of peak mobility has been achieved. Due to temperature variation experiments and technology computer-aided design simulations, we have investigated the key physical phenomena responsible for the measured OFF currents (band-to-band tunneling at high VDS and generation-recombination via the Shockley-Read-Hall process at low VDS).
Keywords :
MOSFET; elemental semiconductors; germanium; high-k dielectric thin films; Ge; GeOI; Shockley-Read-Hall process; band-to-band tunneling; germanium-on-insulator wafers; high-kappa and metal-gate pMOSFET; temperature variation; Computational modeling; Computer simulation; Current measurement; Design automation; Hafnium oxide; MOSFETs; Silicon on insulator technology; Temperature; Tin; Tunneling; Germanium (Ge); MOSFET; hafnium oxide; high- $kappa$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.923539
Filename :
4526770
Link To Document :
