• DocumentCode
    1226365
  • Title

    High dynamic range 2-TFT amplified pixel sensor architecture for digital mammography tomosynthesis

  • Author

    Taghibakhsh, F. ; Karim, K.S.

  • Author_Institution
    Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC
  • Volume
    1
  • Issue
    1
  • fYear
    2007
  • fDate
    2/1/2007 12:00:00 AM
  • Firstpage
    87
  • Lastpage
    92
  • Abstract
    On-pixel amplifiers in amorphous silicon (a-Si) technology are an attractive replacement for industry standard on-pixel switch architectures in active matrix flat panel imagers in order to meet the low noise requirements of low-dose digital imaging modalities such as x-ray fluoroscopy and, more recently, 3D mammography tomosynthesis. However, implementing a-Si pixel amplifiers requires high-performance thin film transistors (TFTs) that are relatively large in size. In this research, a novel high dynamic range amplified pixel architecture using only two TFTs is introduced that is capable of amplifying the sensor value with a user controllable gain over a wide input range. Circuit operation and driving circuits required for on-pixel amplifier arrays are investigated, and simulation results are presented that indicate the feasibility of this pixel architecture for high resolution, low noise and x-ray tomosynthesis applications
  • Keywords
    X-ray imaging; amplifiers; biomedical equipment; biomedical imaging; detector circuits; driver circuits; image sensors; mammography; thin film transistors; 2-TFT; 3D mammography; Si; TFT5; active matrix flat panel imagers; amorphous silicon technology; amplified pixel sensor; digital mammography tomosynthesis; thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds:20060217
  • Filename
    4123980