Integrated HFETs and HFET lasers utilizing carbon doping

Author

Evaldsson, Patrik A. ; Taylor, Geoff W. ; Micovic, M. ; Malik, R. ; Jiang, Shijnn

Author_Institution

R. Inst. of Technol., Stockholm, Sweden

Volume

8

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

370

Lastpage

372

Abstract

Carbon doping is used in the MBE growth of HFETs and the associated laser to provide significant improvement in the contact resistance. The lower resistance enables CW operation of the integrated FET and laser combination as opposed to previous pulsed operation. Compared to the earlier Be-doped samples the threshold is lowered from 30 mA to 18 mA, the total slope efficiency and maximum power are increased to 0.7 W/A and 30 mW from 0.5 W/A and 6 mW respectively, and the 3 dB modulation bandwidth has been extended from 4 GHz to 10 GHz.

Keywords

III-V semiconductors; aluminium compounds; carbon; contact resistance; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; quantum well lasers; semiconductor doping; semiconductor growth; 10 GHz; 18 mA; 3 dB modulation bandwidth; 30 mW; C doping; CW operation; HFET lasers; InGaAs:C-AlGaAs-GaAs; MBE growth; contact resistance; integrated HFET; maximum power; optoelectronic integration; threshold lowering; total slope efficiency; Contact resistance; Doping; FETs; HEMTs; Laser theory; MODFETs; Optical device fabrication; Optical pulses; Optical transmitters; Surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.481120

Filename

481120