Title :
Integrated HFETs and HFET lasers utilizing carbon doping
Author :
Evaldsson, Patrik A. ; Taylor, Geoff W. ; Micovic, M. ; Malik, R. ; Jiang, Shijnn
Author_Institution :
R. Inst. of Technol., Stockholm, Sweden
fDate :
3/1/1996 12:00:00 AM
Abstract :
Carbon doping is used in the MBE growth of HFETs and the associated laser to provide significant improvement in the contact resistance. The lower resistance enables CW operation of the integrated FET and laser combination as opposed to previous pulsed operation. Compared to the earlier Be-doped samples the threshold is lowered from 30 mA to 18 mA, the total slope efficiency and maximum power are increased to 0.7 W/A and 30 mW from 0.5 W/A and 6 mW respectively, and the 3 dB modulation bandwidth has been extended from 4 GHz to 10 GHz.
Keywords :
III-V semiconductors; aluminium compounds; carbon; contact resistance; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; quantum well lasers; semiconductor doping; semiconductor growth; 10 GHz; 18 mA; 3 dB modulation bandwidth; 30 mW; C doping; CW operation; HFET lasers; InGaAs:C-AlGaAs-GaAs; MBE growth; contact resistance; integrated HFET; maximum power; optoelectronic integration; threshold lowering; total slope efficiency; Contact resistance; Doping; FETs; HEMTs; Laser theory; MODFETs; Optical device fabrication; Optical pulses; Optical transmitters; Surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
