Title :
Modeling of time-dependent dielectric breakdown in copper metallization
Author :
Wu, Wen ; Duan, Xiaodong ; Yuan, Jiann S.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu+ diffusion and drift is investigated. An analytical model to predict the lifetime of time-dependent dielectric breakdown is developed. The model predictions agree well with the previously published experimental data at different electric fields and temperatures. Under an acceleration stress condition, the lifetime is proportional to electric field exponentially and consistent with the E model.
Keywords :
copper; diffusion; electric breakdown; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; semiconductor process modelling; Cu; Cu+ diffusion; Cu+ drift; E model; ULSI circuit interconnections; acceleration stress condition; analytical model; copper interconnects; copper metallization; electric field exponential dependence; general continuity equation; lifetime; reliability problem; time-dependent dielectric breakdown; Copper; Degradation; Dielectric breakdown; Equations; Integrated circuit interconnections; Leakage current; Metallization; Potential well; Silicon; Stress;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2003.811602
