Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz

Author

Lau, C.L. ; Feng, Milton ; Lepkowski, Thomas R. ; Wang, G.W. ; Chang, Y. ; Ito, C.

Author_Institution

Ford Microelectron., Colorado Springs, CO, USA

Volume

10

Issue

9

fYear

1989

Firstpage

409

Lastpage

411

Abstract

Ion-implanted GaAs MESFETs with half-micrometer gate length have been fabricated on 3-in-diameter GaAs substrates. At 16 GHz, a minimum noise figure of 0.8 dB with an associated gain of 6.3 dB has been measured. This noise figure is believed to be the lowest ever reported for 0.5- and 0.25- mu m ion-implanted MESFETs, and is comparable to that for 0.25- mu m HEMTs at this frequency. By using the Fukui equation and the fitted equivalent circuit model, a K/sub f/ factor of 1.4 has been obtained. These results clearly demonstrate the potential of ion-implanted MESFET technology for K-band low-noise integrated circuit applications.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; solid-state microwave devices; 0.5 micron; 0.8 dB; 16 GHz; 6.3 dB; Fukui equation; GaAs; III-V semiconductor; K-band; SHF; fitted equivalent circuit model; half-micrometer gate length; integrated circuit applications; ion-implanted MESFETs; low noise MMIC applications; microwave devices; submicron device; Equations; Equivalent circuits; Frequency; Gain measurement; Gallium arsenide; HEMTs; MESFET integrated circuits; MODFETs; Noise figure; Noise measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.34725

Filename

34725