Title :
Noise modeling and measurement techniques [HEMTs]
Author_Institution :
Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille, Villeneuve d´´Ascq, France
fDate :
1/1/1988 12:00:00 AM
Abstract :
The high electron mobility transistor´s (HEMT´s) noise behavior is presented from theoretical and experimental points of view. The general method used in the high-frequency noise analysis is described and the different approximations commonly used in the derivation of the noise parameter expressions are discussed. A comparison between the noise performance of both MESFETs and HEMTs is carried out. The measurement techniques providing the noise figure and the other noise parameters are then described and compared
Keywords :
electric noise measurement; electron device noise; high electron mobility transistors; semiconductor device models; semiconductor device testing; solid-state microwave devices; HEMTs; high electron mobility transistors; high-frequency noise analysis; measurement techniques; noise figure; noise modelling; noise parameters; solid state microwave devices; Circuit noise; Gain; HEMTs; Low-frequency noise; MESFETs; MODFETs; Measurement techniques; Noise figure; Power amplifiers; Semiconductor device noise;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
