Title :
Noise in two-tier matrix amplifiers
Author :
Niclas, Karl B. ; Chang, Augustin P.
Author_Institution :
Watkins-Johnson Co., Palo Alto, CA, USA
fDate :
1/1/1988 12:00:00 AM
Abstract :
A noise theory for the two-tier matrix amplifier is developed that permits the computation of the amplifier´s noise figure as a function of the active device and circuit parameters. The computed results based on the noise parameters of a GaAs MESFET with gate dimensions 0.25 μm×200 μm are discussed. In addition, a comparative study is done on the performance data from a 2×4 matrix amplifier and its equivalent two-stage distributed amplifier. Finally, the noise characteristics of two 2×4 matrix amplifiers incorporating GaAs MESFETs processed on either ion-implanted or VPE (vapor-phase epitaxial) substrate material are compared with those measured on actual amplifiers
Keywords :
electron device noise; equivalent circuits; microwave amplifiers; multiport networks; network analysis; random noise; solid-state microwave circuits; 0.25 micron; 200 micron; GaAs; MESFET; VPE substrate method; active device parameters; active six-port; circuit parameters; equivalent two-stage distributed amplifier; gate dimensions; ion implanted substrates; microwave circuits; noise figure; noise theory; two-tier matrix amplifiers; Active noise reduction; Additives; Circuit noise; Distributed amplifiers; Gallium arsenide; Helium; MESFETs; Noise figure; Propagation losses; Transmission line matrix methods;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
