Title :
Saturation intensity and time response of InGaAs-InGaP MQW optical modulators
Author :
Watson, M.E. ; Chilla, J.L.A. ; Rocca, J.J. ; Kim, J.-W. ; Lile, D.L. ; Vogt, T.J. ; Robinson, G.Y.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
fDate :
2/1/1995 12:00:00 AM
Abstract :
We report modulation saturation and time response measurements on InGaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7±0.1) kW/cm2 for a 0-10 V swing and switching times between 10 and 90 ns, depending on the bias voltage and incident light intensity. The observed dependence indicates that field screening due to carrier build-up is the dominant physical mechanism determining both the speed and the saturation intensity. This conclusion is supported by results of theoretical calculations
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical saturation; semiconductor quantum wells; 0 to 10 V; 10 to 90 ns; InGaAs-InGaP; InGaAs-InGaP MQW optical modulators; carrier build-up; field screening; modulation saturation; saturation intensity; speed; switching times; time response; High speed optical techniques; Intensity modulation; Optical devices; Optical filters; Optical modulation; Optical saturation; Pump lasers; Quantum well devices; Time factors; Time measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
