Polarization dependence of photo-detection in strained multiple quantum-well semiconductor lasers

We investigated polarization dependence of photo-detection in strained layer multiple quantum-well (SL-MQW) lasers for time compressive multiplex (TCM) application. The polarization dependence of SL-MQW lasers is larger than that of bulk lasers because of the quantum effect. To improve the polarization dependence of photo-detection, we theoretically and experimentally analyzed the effect of strain quantity on the polarization dependence, and found that large tensile strained quantum-well structure is suitable for the small polarization independence of 0.8 dB and low threshold current characteristics. Moreover, we achieved smaller polarization dependence less than 0.5 dB by applying reverse bias voltage in the photo-detection mode