Title :
A self-consistent model for hetero-gate all around tunnel FET
Author :
Bhowmick, Bhaskar ; Jena, K. ; Baishya, S.
Author_Institution :
ECE Deptt., NIT Silchar, Silchar, India
Abstract :
This paper proposes a new self-consistent model for 3D tunnel FET with all around hetero-gate oxide. Device structure has been optimized for channel length and source doping. Schrödinger-Poisson self-consistent method is used to develop a new three dimensional (3D) Schrödinger´s equation model using separation of variable technique and a 2D potential function. Model results are validated using TCAD simulation data.
Keywords :
Poisson equation; Schrodinger equation; field effect transistors; semiconductor device models; technology CAD (electronics); tunnel transistors; 2D potential function; 3D tunnel FET; Schrodinger-Poisson self-consistent method; TCAD simulation data; all around heterogate oxide; channel length; device structure; self-consistent model; source doping; three dimensional Schrodinger equation model; variable separation technique; Doping; Electric potential; Field effect transistors; Logic gates; Mathematical model; Semiconductor process modeling; Tunneling; Band-to-band tunneling; hetero-gate; self-consistent method;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2014 2nd International Conference on
Conference_Location :
Combiatore
DOI :
10.1109/ICDCSyst.2014.6926147
