A self-consistent model for hetero-gate all around tunnel FET

Author

Bhowmick, Bhaskar ; Jena, K. ; Baishya, S.

Author_Institution

ECE Deptt., NIT Silchar, Silchar, India

fYear

2014

fDate

6-8 March 2014

Firstpage

1

Lastpage

5

Abstract

This paper proposes a new self-consistent model for 3D tunnel FET with all around hetero-gate oxide. Device structure has been optimized for channel length and source doping. Schrödinger-Poisson self-consistent method is used to develop a new three dimensional (3D) Schrödinger´s equation model using separation of variable technique and a 2D potential function. Model results are validated using TCAD simulation data.

Keywords

Poisson equation; Schrodinger equation; field effect transistors; semiconductor device models; technology CAD (electronics); tunnel transistors; 2D potential function; 3D tunnel FET; Schrodinger-Poisson self-consistent method; TCAD simulation data; all around heterogate oxide; channel length; device structure; self-consistent model; source doping; three dimensional Schrodinger equation model; variable separation technique; Doping; Electric potential; Field effect transistors; Logic gates; Mathematical model; Semiconductor process modeling; Tunneling; Band-to-band tunneling; hetero-gate; self-consistent method;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICDCS), 2014 2nd International Conference on

Conference_Location

Combiatore

Type

conf

DOI

10.1109/ICDCSyst.2014.6926147

Filename

6926147