DocumentCode :
1227716
Title :
Electric field enhancement and power absorption in microwave TR-switches
Author :
Semenov, V. ; Lisak, M. ; Anderson, D.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Nizhny Novgorod, Russia
Volume :
43
Issue :
2
fYear :
1995
fDate :
2/1/1995 12:00:00 AM
Firstpage :
286
Lastpage :
292
Abstract :
An analytical and numerical investigation is made of electric field enhancement due to scattering of an incident plane wave by a biconical conductor. An application to microwave transmit-receive switches (TR) shows that field enhancement factors of the order of 20 to 40 are to be expected in the region close to the keep-alive contacts. An analysis of the microwave absorption by a small plasma sphere located in the vertex of the biconical conductor is also presented, showing that the plasma sphere absorbs a significant fraction of the incident power independently of the plasma size. This explains the observed absorption properties during the turn-on phase of TR switches
Keywords :
electric breakdown; electric fields; electromagnetic wave absorption; electromagnetic wave scattering; microwave devices; switches; T/R switches; absorption properties; biconical conductor; electric field enhancement; incident plane wave scattering; microwave TR-switches; microwave absorption; microwave transmit-receive switches; plasma sphere; power absorption; turn-on phase; Conductors; Electric breakdown; Electromagnetic scattering; Electromagnetic wave absorption; Electromagnetic waveguides; Plasma applications; Plasma properties; Plasma sources; Plasma waves; Switches;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.348086
Filename :
348086
Link To Document :
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