• DocumentCode
    122774
  • Title

    Implications of transport models on the analog performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET

  • Author

    Gupta, Neeraj ; Chaujar, Rishu

  • Author_Institution
    Dept. of Eng. Phys., Delhi Technol. Univ., New Delhi, India
  • fYear
    2014
  • fDate
    6-8 March 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The analog applications of different transport models applied on Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET is investigated based on the simulated results from ATLAS and DevEdit. Simulation results show that this device demonstrates a superior performance in terms of better Ion/Ioff ratio in case of HDM, high output impedance in case of DDM, and EBM is efficient for depicting the behavior of sub-micron devices.
  • Keywords
    MOSFET; nanowires; semiconductor device models; work function; ATLAS; DDM; DevEdit; EBM; HDM; gate electrode workfunction engineered silicon nanowire MOSFET; submicron devices; transport models; Electric fields; Hydrodynamics; Integrated circuit modeling; Logic gates; MOSFET; Nanoscale devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems (ICDCS), 2014 2nd International Conference on
  • Conference_Location
    Combiatore
  • Type

    conf

  • DOI
    10.1109/ICDCSyst.2014.6926154
  • Filename
    6926154
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=122774