A dual-gate FET subharmonic injection-locked self-oscillating active integrated antenna for RF transmission

Author

Chen, Yan ; Chen, Zhizhang

Author_Institution

Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada

Volume

13

Issue

6

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

199

Lastpage

201

Abstract

A planar subharmonic injection-locked GaAs dual-gate MESFET (DGMESFET) self-oscillating active integrated antenna (AIA) is presented for RF transmission. The oscillation is obtained with one gate of the DGMESFET at 2.052 GHz, and the stabilization of the oscillation is achieved by injecting a small subharmonic low-noise signal into the other gate of the DGMESFET. Phase noise was measured to be -98 dBc/Hz at the 10 KHz offset. The structure was shown to have the potential in performing triple functions of radiation, low noise oscillation and mixing (or modulation), a capability required for low cost wireless systems such as RFID tags and indoor positioning systems.

Keywords

III-V semiconductors; Schottky gate field effect transistors; active antennas; gallium arsenide; injection locked oscillators; phase noise; 2.052 GHz; GaAs; GaAs dual-gate MESFET; RF transmission; RFID tag; indoor positioning system; phase noise; planar active integrated antenna; self-oscillation; subharmonic injection locking; wireless system; Antenna measurements; Cost function; FETs; Gallium arsenide; Noise measurement; Phase measurement; Phase noise; RFID tags; Radio frequency; Transmitting antennas;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.814093

Filename

1208406