Title :
Noise analysis of a photoreceiver using a P-I-N and GaAs HBT distributed amplifier combination
Author :
Tian, Xizhen ; Freundorfer, A.P. ; Roy, Langis
Author_Institution :
Nortel Networks, Ottawa, Ont., Canada
fDate :
6/1/2003 12:00:00 AM
Abstract :
A noise analysis for a common-collector-cascode traveling wave HBT preamplifier is developed. The photoreceiver, consisting of a P-I-N and GaAs HBT MMIC distributed amplifier, was implemented using Nortel´s f/sub T/=70 GHz GaAs HBT process, is the first to have a P-I-N mounted on the MMIC chip. The P-I-N preamplifier, having a measured bandwidth of 22 GHz, displayed a measured average equivalent input noise current density of 24 pA//spl radic/Hz. Good agreement was obtained between the predicted and measured noise performance.
Keywords :
MMIC amplifiers; bipolar MMIC; distributed amplifiers; heterojunction bipolar transistors; integrated circuit noise; optical receivers; preamplifiers; travelling wave amplifiers; 22 GHz; 70 GHz; GaAs; HBT distributed amplifier; MMIC distributed amplifier; P-I-N preamplifier; average equivalent input noise current density; common-collector-cascode traveling wave HBT preamplifier; noise performance; optical receiver applications; photoreceiver; Current measurement; Density measurement; Distributed amplifiers; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Noise measurement; PIN photodiodes; Preamplifiers; Semiconductor device measurement;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2003.814096
