X-band doubly balanced resistive FET mixer with very low intermodulation

Author

De Flaviis, F. ; Maas, S.A.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

43

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

457

Lastpage

460

Abstract

This paper describes a practical realization of a mixer that achieves low intermodulation distortion by using the channel resistance of a GaAs MESFET to provide mixing and achieves even-order spurious response rejection through the use of a doubly balanced structure. Very good results were achieved in terms of second- and third-harmonic levels of -67 and -45 dBC, respectively, at +10 dBm input level. The band-center conversion loss was 11 dB. The circuit was realized in microstrip on an alumina substrate, with a monolithic FET “quad”

Keywords

III-V semiconductors; MESFET circuits; gallium arsenide; hybrid integrated circuits; intermodulation distortion; microstrip circuits; microwave integrated circuits; microwave mixers; 11 dB; Al₂O₃; GaAs; GaAs MESFET; IMD; X-band; alumina substrate; band-center conversion loss; channel resistance; doubly balanced structure; even-order spurious response rejection; intermodulation distortion; low intermodulation; microstrip; monolithic FET quad; resistive FET mixer; second-harmonic levels; third-harmonic levels; Gallium arsenide; Intermodulation distortion; MESFETs; Microstrip; Microwave FETs; Microwave circuits; Microwave frequencies; Mixers; Predictive models; Space technology;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.348109

Filename

348109