A GSM LNA using mutual-coupled degeneration

Author

Chunyu Xin ; Sanchez-Sinencio, E.

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

Volume

15

Issue

2

fYear

2005

Firstpage

68

Lastpage

70

Abstract

This letter presents a low noise amplifier (LNA) input impedance matching technique using mutual coupled inductors. This scheme not only provides the required input impedance matching but also interstage impedance transformation for the cascoded transistor. The mutual coupled inductors also help to improve the circuit´s reverse isolation. A 900-MHz global system for mobile communication LNA using this technique is designed and fabricated using 0.35-μm standard complementary metal oxide semiconductor technology. It achieves a 17-dB gain, 3.4-dB noise figure, and -5.1-dBm IIP3. The LNA draws 5.6 mA from a single 2.3-V power supply.

Keywords

CMOS integrated circuits; UHF amplifiers; cellular radio; impedance matching; inductors; 0.35 micron; 17 dB; 2.3 V; 3.4 dB; 5.6 mA; 900 MHz; CMOS technology; GSM LNA; cascoded transistor; input impedance matching; interstage impedance transformation; low noise amplifier; mobile communication; mutual coupled inductors; mutual coupling; mutual-coupled degeneration; reverse isolation; Circuit noise; Communication standards; Coupling circuits; GSM; Impedance matching; Inductors; Isolation technology; Low-noise amplifiers; Mutual coupling; Semiconductor device noise; Input impedance matching; low noise amplifier (LNA); mutual coupling;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2004.842819

Filename

1390967