Title :
A GSM LNA using mutual-coupled degeneration
Author :
Chunyu Xin ; Sanchez-Sinencio, E.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
This letter presents a low noise amplifier (LNA) input impedance matching technique using mutual coupled inductors. This scheme not only provides the required input impedance matching but also interstage impedance transformation for the cascoded transistor. The mutual coupled inductors also help to improve the circuit´s reverse isolation. A 900-MHz global system for mobile communication LNA using this technique is designed and fabricated using 0.35-μm standard complementary metal oxide semiconductor technology. It achieves a 17-dB gain, 3.4-dB noise figure, and -5.1-dBm IIP3. The LNA draws 5.6 mA from a single 2.3-V power supply.
Keywords :
CMOS integrated circuits; UHF amplifiers; cellular radio; impedance matching; inductors; 0.35 micron; 17 dB; 2.3 V; 3.4 dB; 5.6 mA; 900 MHz; CMOS technology; GSM LNA; cascoded transistor; input impedance matching; interstage impedance transformation; low noise amplifier; mobile communication; mutual coupled inductors; mutual coupling; mutual-coupled degeneration; reverse isolation; Circuit noise; Communication standards; Coupling circuits; GSM; Impedance matching; Inductors; Isolation technology; Low-noise amplifiers; Mutual coupling; Semiconductor device noise; Input impedance matching; low noise amplifier (LNA); mutual coupling;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2004.842819
