Title :
A technique for minimizing intermodulation distortion of GaAs FET´s
Author :
Koizumi, Haruhiko ; Nagata, Shunsuke ; Kanazawa, Kunihiko
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fDate :
2/1/1995 12:00:00 AM
Abstract :
This paper describes the theory to minimize the intermodulation distortion under a certain current bias condition for GaAs FET´s. A device-parametric study has been carried out to obtain the general equation that provides the lowest distortion condition as a function of the operating current. Based on the present theory, FET parameters have been designed practically
Keywords :
III-V semiconductors; Schottky gate field effect transistors; UHF field effect transistors; gallium arsenide; intermodulation distortion; microwave field effect transistors; FET parameters; GaAs; GaAs FET; IMD minimization; current bias condition; device-parametric study; intermodulation distortion; Anisotropic magnetoresistance; Antennas and propagation; FETs; Gallium arsenide; Intermodulation distortion; Microstrip antenna arrays; Microwave propagation; Microwave theory and techniques; Resonant frequency; Transmission line matrix methods;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
