DocumentCode :
1228142
Title :
Microwave-Frequency Effects on Microplasma
Author :
Xue, Jun ; Hopwood, Jeffrey A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA
Volume :
37
Issue :
6
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
816
Lastpage :
822
Abstract :
Capacitively coupled microplasma generation becomes more efficient at microwave frequencies. Helium and argon microplasmas are characterized using excitation frequencies of 450 MHz, 900 MHz, and 1.8 GHz. These microplasmas are tested at both atmospheric pressure and 0.4 torr. We have experimentally determined the microplasma´s electrical impedance, which consists of bulk plasma resistance and capacitive sheath reactance. These two parameters were measured by fitting theoretical power reflection coefficients to experimental forward and reflected microwave power as a function of frequency. Microplasma resistance decreases with increasing frequency, showing that the generation of free electrons depends on the driving frequency. In addition, the reactive sheath impedance and the microwave electrode voltage also decrease with an increase of frequency. A 3-D microplasma simulation shows that a narrower sheath width exists for higher frequency microplasma, and this is responsible for reducing the reactive impedance and the peak-to-peak electrode voltage. At higher microwave frequency, the decreased electrode voltage reduces both the plasma potential and the ion kinetic energy losses, thus increasing the electron density.
Keywords :
argon; helium; plasma collision processes; plasma density; plasma production; plasma sheaths; plasma simulation; plasma transport processes; 3D microplasma simulation; Ar; He; argon microplasmas; bulk plasma resistance; capacitively coupled microplasma generation; driving frequency; electron density; forward microwave power; free electron generation; frequency 1.8 GHz; frequency 450 MHz; frequency 900 MHz; helium microplasmas; ion kinetic energy loss; microplasma electrical impedance; microplasma resistance; microwave electrode voltage; microwave frequency effects; plasma capacitive sheath reactance; plasma potential; power reflection coefficient; pressure 0.4 torr; pressure 1 atm; reactive sheath impedance; reflected microwave power; Microplasma; microwave plasma; plasma impedance; plasma simulation;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2009.2015453
Filename :
4811974
Link To Document :
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