DocumentCode
1228210
Title
A fully analytical AC large-signal model of the GaAs MESFET for nonlinear network analysis and design
Author
Madjar, Asher
Author_Institution
RAFAEL, Haifa, Israel
Volume
36
Issue
1
fYear
1988
fDate
1/1/1988 12:00:00 AM
Firstpage
61
Lastpage
67
Abstract
A fully analytical version of an AC large-signal model for the GaAs MESFET is presented. The source model is based on basic principles and the actual physics and geometry of the device. The analytical version was developed by curve fitting the analytical expressions to the source model. The accuracy of the model for microwave circuits is demonstrated using simulation examples of a power amplifier and a mixer
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; nonlinear network analysis; nonlinear network synthesis; semiconductor device models; solid-state microwave circuits; solid-state microwave devices; AC large-signal model; GaAs; III-V semiconductor; MESFET; curve fitting; microwave circuits; network design; nonlinear network analysis; source model; Analytical models; Circuit simulation; Curve fitting; Gallium arsenide; Geometry; MESFETs; Microwave circuits; Microwave devices; Physics; Solid modeling;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.3482
Filename
3482
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