Title :
Ultra-low power circuit design using double-gate FinFETs
Author :
Devi Tejashwini, G. ; Raju, I.B.K. ; Chary, Gnaneshwara
Author_Institution :
ECE Dept., Padmasri Dr. B.V. Raju Inst. of Technol., Medak, India
Abstract :
In this paper, the design and performance of basic Digital (AND, OR, NAND, NOR, XOR, XNOR, NOT, Half-Adder) and Analog (Current Mirror, Cascode Current Mirror, Comparator) circuits using 20nm FinFET technology has presented. 20nm FinFET technology has been used for improvement in performance and for optimizing power mainly in Analog circuits. In this work, for different widths of NMOS and PMOS and low voltages, better results of power performance is observed in both digital and analog circuits using FinFET technology.
Keywords :
MOSFET; NAND circuits; NOR circuits; adders; analogue integrated circuits; comparators (circuits); current mirrors; integrated circuit design; logic design; low-power electronics; NAND circuits; NMOS; NOT circuits; PMOS; XNOR circuits; XOR circuits; analog circuits; cascode current mirror circuits; comparator circuits; digital circuits; double-gate FinFET; half-adder circuits; size 20 nm; ultra-low power circuit design; Analog circuits; CMOS integrated circuits; Circuit synthesis; FinFETs; Logic gates; Mirrors; Analog Circuits; Digital Circuits; FinFETs; SPICE; ultra-low power;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2014 2nd International Conference on
Conference_Location :
Combiatore
DOI :
10.1109/ICDCSyst.2014.6926194
