Analysis of the Voltage Swing for Logic and Memory Applications in Si/SiGe Resonant Interband Tunnel Diodes Grown by Molecular Beam Epitaxy

A method is investigated to directly engineer the voltage swing in SiGe resonant interband tunnel diodes (RITDs). Voltage swing, defined here as the voltage difference between the peak voltage and the projected peak voltage, is independent of series resistance, and thus directly impacts the noise margin in hybrid tunnel diode memory and logic applications. The three components of the total RITD current are analyzed to describe the voltage swing. The dependence of voltage swing on delta-doping concentrations and post-growth annealing temperatures in SiGe RITDs grown by low-temperature molecular beam epitaxy (LT-MBE) is investigated and the experimental results are compared with a theoretical analysis. Techniques to increase the voltage swing are discussed