Title :
A 4.5-GHz GaAs dual-modulus prescalar IC
Author :
Ohhata, Masanoru ; Takada, Tohru ; Ino, Masayuki ; Kato, Naoki ; Ida, Masao
Author_Institution :
Electr. Commun. Lab., NTT, Kanagawa, Japan
fDate :
1/1/1988 12:00:00 AM
Abstract :
A description is given of a 4.5-GHz divide-by-256/258 dual-modulus prescalar with a reset function. The prescalar operates at a supply voltage of 3 V with a power dissipation of 100 mW. A low-power, source-coupled FET logic (LSCFL) using novel level-shift circuits and 0.5-μm-gate buried p-layer SAINT FETs were used to achieve this performance
Keywords :
III-V semiconductors; digital integrated circuits; field effect integrated circuits; gallium arsenide; integrated logic circuits; microwave integrated circuits; scaling circuits; 0.5 micron; 100 mW; 3 V; 4.5 GHz; GaAs; III-V semiconductors; LSCFL; SCFL; SHF; buried p-layer SAINT FETs; digital IC; dual-modulus prescalar IC; level-shift circuits; low-power; power dissipation; reset function; source-coupled FET logic; submicron gate length; Batteries; Coupling circuits; FETs; Flip-flops; Frequency synthesizers; Gallium arsenide; Logic; Low voltage; Power dissipation; Threshold voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
