Title :
Compositional Redistribution in Coherent Si1-xGex Islands on Si(100)
Author :
Lockwood, David J. ; Wu, Xiaohua ; Baribeau, Jean-Marc
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council, Ottawa, Ont.
fDate :
3/1/2007 12:00:00 AM
Abstract :
Coherent Si1-xGex island growth by molecular beam epitaxy is studied for a fixed growth temperature but for different Ge concentrations in the range 0.37 lesxles 0.56. A combined transmission electron microscopy, X-ray diffraction, and Raman spectroscopy characterization of the samples showed that during growth the Ge migrates towards the center of the large islands to minimize the strain energy, while maintaining epitaxial growth, and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher
Keywords :
Ge-Si alloys; Raman spectra; X-ray diffraction; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; transmission electron microscopy; Raman spectroscopy; Si; Si1-xGex-Si; X-ray diffraction; coherent island growth; molecular beam epitaxy; semiconductor epitaxial growth; strain energy; transmission electron microscopy; Capacitive sensors; Chemicals; Helium; Molecular beam epitaxial growth; Raman scattering; Semiconductor nanostructures; Spectroscopy; Temperature; Transmission electron microscopy; X-ray diffraction; Alloy; Ge; Raman spectroscopy; Si; X-ray diffraction; coherent growth; dots; islands; strain; transmission electron microscopy;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2007.891818
