Title : 
A 1.5-V 75-dB dynamic range third-order Gm-C filter integrated in a 0.18-μm standard digital CMOS process
         
        
            Author : 
Yodprasit, Uroschanit ; Enz, Christian C.
         
        
            Author_Institution : 
Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
         
        
        
        
        
            fDate : 
7/1/2003 12:00:00 AM
         
        
        
        
            Abstract : 
A design methodology of a CMOS linear transconductor for low-voltage and low-power filters is proposed in this paper. It is applied to the analog baseband filter used in a transceiver designed for wireless sensor networks. The transconductor linearization scheme is based on regulating the drain voltage of triode-biased input transistors through an active-cascode loop. A third-order Butterworth low-pass filter implemented with this transconductor is integrated in a 0.18-μm standard digital CMOS process. The filter can operate down to 1.2-V supply voltage with a cutoff frequency ranging from 15 to 85 kHz. The 1% total harmonic distortion dynamic range measured at 1.5 V for 20-kHz input signal and 50-kHz cutoff frequency is 75 dB, while dissipating 240 μW.
         
        
            Keywords : 
Butterworth filters; CMOS analogue integrated circuits; active filters; harmonic distortion; linearisation techniques; low-pass filters; low-power electronics; transceivers; 0.18 micron; 1.5 V; 15 to 85 kHz; 240 muW; CMOS linear transconductor; active cascode loop; analog baseband filter; design method; digital CMOS process; dynamic range; linearization; low-voltage low-power filter; third-order Butterworth low-pass filter; third-order Gm-C filter; total harmonic distortion; transceiver; triode transistor; wireless sensor network; Baseband; Cutoff frequency; Design methodology; Dynamic range; Low pass filters; Nonlinear filters; Transceivers; Transconductors; Voltage; Wireless sensor networks;
         
        
        
            Journal_Title : 
Solid-State Circuits, IEEE Journal of
         
        
        
        
        
            DOI : 
10.1109/JSSC.2003.813293