Title :
Compositionally graded emitter InGa(As)P/GaAs heterojunction bipolar transistors
Author :
Ito, H. ; Nittono, T. ; Watanabe, N. ; Ishibashi, Takayuki
Author_Institution :
NTT LSI Labs., Kanagawa
fDate :
12/8/1994 12:00:00 AM
Abstract :
The first successful fabrication of compositionally graded emitter InGa(As)P/GaAs HBTs is reported. It is found that the influence of recombination current in the emitter depletion layer on current gain characteristics by compositional grading is small. The recombination current in the InGa(As)P emitter layer is less than 1/10 that in an AlGaAs emitter layer grown at a 100°C higher temperature
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; HBT; InGaAsP-GaAs; compositional grading; compositionally graded emitter; current gain characteristics; emitter depletion layer; fabrication; heterojunction bipolar transistors; recombination current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941449
