DocumentCode :
1228513
Title :
Band offsets of In0.30Ga0.70As/In0.29 Al0.71As heterojunction grown on GaAs substrate
Author :
Shieh, J.L. ; Chyi, J.-I. ; Lin, R.J. ; Lin, R.M. ; Pan, J.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Volume :
30
Issue :
25
fYear :
1994
fDate :
12/8/1994 12:00:00 AM
Firstpage :
2172
Lastpage :
2173
Abstract :
Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In 0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71±0.05 eV which corresponds to a conduction band offset to bandgap difference ratio ~0.66. The comparison between experimental and theoretical results is presented
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; indium compounds; semiconductor heterojunctions; GaAs; GaAs substrate; In0.30Ga0.70As-In0.29Al0.71 As; band offsets; bandgap difference; conduction band discontinuity; current-voltage measurement; heterojunction; temperature-dependent I/V measurement;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19941445
Filename :
350122
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1228513
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