A 300-μW 1.9-GHz CMOS oscillator utilizing micromachined resonators

Author

Otis, Brian P. ; Rabaey, Jan M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA

Volume

38

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

1271

Lastpage

1274

Abstract

A low-power low-phase-noise 1.9-GHz RF oscillator is presented. The oscillator employs a single thin-film bulk acoustic wave resonator and was implemented in a standard 0.18-μm CMOS process. This paper addresses design issues involved in codesigning micromachined resonators with CMOS circuitry to realize ultralow-power RF transceiver components. The oscillator achieves a phase-noise performance of -100 dBc/Hz at 10-kHz offset, -120 dBc/Hz at 100-kHz offset, and -140 dBc/Hz at 1-MHz offset. The startup time of the oscillator is less than 1 μs. The oscillator core consumes 300 μA from a 1-V supply.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; acoustic resonators; bulk acoustic wave devices; low-power electronics; micromachining; micromechanical resonators; phase noise; 0.18 micron; 1 V; 1.9 GHz; 300 muA; 300 muW; CMOS circuit; MEMS resonator; RF transceiver; low-power RF oscillator; micromachining process; phase noise; startup time; thin-film bulk acoustic wave resonator; Film bulk acoustic resonators; Frequency synthesizers; Phase locked loops; Phase noise; Radio frequency; Resonance; Stability; Thin film circuits; Transceivers; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.813219

Filename

1208479