Title :
Improved reflectivity of AlPSb/GaPSb Bragg reflector for 1.55 μm wavelength
Author :
Anan, T. ; Shimomura, H. ; Sugou, S.
Author_Institution :
Opto-electron. Res. Labs, NEC Corp., Tsukuba
fDate :
12/8/1994 12:00:00 AM
Abstract :
A high-quality AlPSb/GaPSb Bragg reflector lattice matched to InP was grown by gas-source molecular beam epitaxy, and highly reflective DBR mirrors were obtained by improving both the layer flatness and the compositional uniformity. A reflectivity of over 99% was obtained at 1.6 μm from a 20 pair AlPSb/GaPSb quarter-wave mirror, demonstrating the advantage of using this material system to fabricate long-wavelength surface-emitting lasers
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; laser mirrors; molecular beam epitaxial growth; reflectivity; semiconductor growth; semiconductor lasers; surface emitting lasers; 1.55 μm wavelength; 1.55 mum; AlPSb-GaPSb; AlPSb/GaPSb Bragg reflector; AlPSb/GaPSb quarter-wave mirror; DBR laser diodes; InP; compositional uniformity; gas-source molecular beam epitaxy; high-quality; improved reflectivity; lattice matched; layer flatness; long-wavelength surface-emitting lasers; reflectivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941448
