Title :
High temperature CW operation of GaAs/AlGaAs high barrier gain offset VCSELs
Author :
Morgan, R.A. ; Asom, M.T. ; Guth, G.D. ; Focht, M.W. ; Mullally, T. ; Christodoulides, Demetrios N.
fDate :
12/8/1994 12:00:00 AM
Abstract :
Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150°C. These results are compared to a low barrier VCSEL of similar design
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; spectral line shift; surface emitting lasers; 150 C; 93 mA; GaAs-AlGaAs; GaAs/AlGaAs high barrier gain offset VCSELs; blue shifting; high barrier confinement spacers; high temperature CW operation; optical gain; threshold current; unbonded;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941447
