DocumentCode :
1228912
Title :
Experimental verification of a novel electrical test structure for measuring contact size
Author :
Freeman, G. ; Lukaszek, W. ; Ekstedt, T.W. ; Peters, D.W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Volume :
2
Issue :
1
fYear :
1989
Firstpage :
9
Lastpage :
15
Abstract :
An electrical test structure that measures contact size without reliance on contact resistivity measurements is presented. A comparison with SEM photographs shows that the structure measures contact size in the range of 1.0 mu m with a resolution close to 0.2 mu m. Results are shown for measuring the size of contacts to poly, but the concept should also apply to measuring contacts to active areas, or contacts between two metal layers. In addition to the size of contacts to poly, the structure presented also measures the linewidth and sheet resistance of the poly, and misalignment of contacts to poly. It consists of a digital vernier of 72 samples and a linewidth structure and is implemented without active circuitry in a 2 by 12 pad array using three masking levels.<>
Keywords :
metallisation; semiconductor device testing; semiconductor technology; spatial variables measurement; 1 micron; contact misalignment; contact size measurement; digital vernier; electrical test structure; linewidth; sheet resistance; submicron resolution; Conductivity; Contact resistance; Control equipment; Electric variables measurement; Electrical resistance measurement; Monitoring; Scanning electron microscopy; Size measurement; Strips; Testing;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.16998
Filename :
16998
Link To Document :
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