RF Model of BEOL Vertical Natural Capacitor (VNCAP) Fabricated by 45-nm RF CMOS Technology and Its Verification

Author

Kang, In Man ; Jung, Seung-Jae ; Choi, Tae-Hoon ; Jung, Jae-Hong ; Chung, Chulho ; Kim, Han-Su ; Park, Kangwook ; Oh, Hansu ; Lee, Hyun-Woo ; Jo, Gwangdoo ; Kim, Young-Kwang ; Kim, Han-Gu ; Choi, Kyu-Myung

Author_Institution

Syst. LSI Div., Samsung Electron., Yongin

Volume

30

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

538

Lastpage

540

Abstract

A radio-frequency equivalent circuit model for the symmetric vertical natural capacitor (VNCAP) in a 45 nm low-standby-power CMOS process is presented. The average effective capacitance density of 2.24 fF/ mum² is obtained from VNCAPs of 1 times (M1 - M5) + 2 times (M6 - M7) metal-layer configuration after the open-short de-embedding procedure. The proposed model consists of main series capacitance network and lossy substrate network. The accuracy of the VNCAP model is verified S-parameters, effective capacitance C_eff, and quality factor (Q) up to 15 GHz. The proposed model can accurately describe the frequency characteristics of S-parameters, C_eff, and Q-factor up to 15 GHz for VNCAPs with different widths and lengths.

Keywords

CMOS integrated circuits; Q-factor; S-parameters; capacitors; BEOL vertical natural capacitor; Q-factor; RF CMOS technology; RF model; S-parameters; lossy substrate network; main series capacitance network; metal-layer configuration; quality factor; size 45 nm; On-wafer radio-frequency (RF) measurement; RF passive device model; quality factor; vertical natural capacitor (VNCAP);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2015781

Filename

4812042