Geometry Dependence of CMOS-Compatible, Polysilicon, Leaky-Mode Photodetectors

Author

Pownall, Robert ; Yuan, Guangwei ; Chen, Tom W. ; Nikkel, Phil ; Lear, Kevin L.

Author_Institution

Colorado State Univ., Fort Collins, CO

Volume

19

Issue

7

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

513

Lastpage

515

Abstract

Complementary metal-oxide-semiconductor-compatible metal-semiconductor-metal polysilicon photodiodes fabricated in a commercial 0.35-mum technology offer estimated responsivities of up to 0.35 A/W at 654 nm. An effective absorption coefficient of 0.63 dB/mum was extracted from responsivities for 5- to 10-mum-long waveguide-coupled detectors. Increasing responsivity at smaller contact spacing indicated a two-part photocurrent response, with secondary photocurrent dominating at small contact spacings and high electric fields

Keywords

CMOS integrated circuits; absorption coefficients; elemental semiconductors; integrated optics; integrated optoelectronics; optical waveguides; photodetectors; photodiodes; silicon; 0.35 mum; 5 to 10 mum; 654 nm; CMOS-compatible photodetectors; Si; absorption coefficient; complementary metal-oxide-semiconductor compatibility; leaky-mode photodetectors; photocurrent response; photodetector responsivity; photodiodes; polysilicon photodetectors; secondary photocurrent; waveguide-coupled detectors; CMOS technology; Detectors; Geometry; Optical interconnections; Optical waveguides; Photoconductivity; Photodetectors; Photodiodes; Silicon; Space technology; Complementary metal–oxide–semiconductor (CMOS)-compatible optoelectronic integrated circuits; leaky-mode metal–semiconductor–metal (MSM) photodiodes; optical interconnects; photoconductivity; waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.893573

Filename

4126567