DocumentCode
1228975
Title
A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects
Author
Lime, Franois ; Iñiguez, Benjamin ; Moldovan, Oana
Author_Institution
Electromagn. et Photonique (IMEP-LAHC), Inst. de Microelectron., Grenoble
Volume
55
Issue
6
fYear
2008
fDate
6/1/2008 12:00:00 AM
Firstpage
1441
Lastpage
1448
Abstract
A drain-current model for undoped symmetric double-gate MOSFETs is proposed. Channel-length modulation and drain-induced barrier lowering are modeled by using an approximate solution of the 2D Poisson equation. The new model is valid and continuous in linear and saturation regimes, as well as in weak and strong inversions. Excellent agreement was found with Silvaco-ATLAS simulations.
Keywords
MOSFET; Poisson equation; 2D Poisson equation; Channel-length modulation; Silvaco-ATLAS simulations; drain-induced barrier lowering; quasi 2D compact drain-current model; short-channel effects; undoped symmetric double-gate MOSFETs; CMOS technology; Capacitance; Fluctuations; Intrusion detection; MOSFETs; Poisson equations; Semiconductor device modeling; Semiconductor process modeling; Spine; Compact device modeling; MOSFET; double gate (DG); short-channel effects;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2008.921980
Filename
4527063
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