• DocumentCode
    1228978
  • Title

    \\hbox {HfO}_{2} –III-Nitride RF Switch With Capacitively Coupled Contacts

  • Author

    Koudymov, Alexei ; Pala, Nezih ; Tokranov, V. ; Oktyabrsky, Serge ; Gaevski, Mikhail ; Jain, R. ; Yang, J. ; Hu, X. ; Shur, Michael ; Gaska, Remis ; Simin, Grigory

  • Author_Institution
    Rensselaer Polytech. Inst., Troy, NY
  • Volume
    30
  • Issue
    5
  • fYear
    2009
  • fDate
    5/1/2009 12:00:00 AM
  • Firstpage
    478
  • Lastpage
    480
  • Abstract
    We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO2 layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than AlGaN/GaN HFET switches.
  • Keywords
    aluminium compounds; gallium compounds; hafnium compounds; high electron mobility transistors; semiconductor switches; AlGaN-GaN; HFET switches; HfO2; capacitively coupled contacts; gate dielectric; heterostructure field-effect transistors; metal-oxide-semiconductor; radio-frequency switch; surface passivation layer; $hbox{HfO}_{2}$; AlGaN/GaN; capacitive coupling; high- $k$ dielectric; radio-frequency (RF) switch;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2017284
  • Filename
    4812048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1228978