DocumentCode :
1228978
Title :
Author :
Koudymov, Alexei ; Pala, Nezih ; Tokranov, V. ; Oktyabrsky, Serge ; Gaevski, Mikhail ; Jain, R. ; Yang, J. ; Hu, X. ; Shur, Michael ; Gaska, Remis ; Simin, Grigory
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY
Volume :
30
Issue :
5
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
478
Lastpage :
480
Abstract :
We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO2 layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than AlGaN/GaN HFET switches.
Keywords :
aluminium compounds; gallium compounds; hafnium compounds; high electron mobility transistors; semiconductor switches; AlGaN-GaN; HFET switches; HfO2; capacitively coupled contacts; gate dielectric; heterostructure field-effect transistors; metal-oxide-semiconductor; radio-frequency switch; surface passivation layer; $hbox{HfO}_{2}$ ; AlGaN/GaN; capacitive coupling; high- $k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2017284
Filename :
4812048
Link To Document :
