Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory

Author

Kamalanathan, Deepak ; Russo, Ugo ; Ielmini, Daniele ; Kozicki, Michael N.

Author_Institution

Center for Appl. Nanoionics, Arizona State Univ., Tempe, AZ

Volume

30

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

553

Lastpage

555

Abstract

The transition from the on (low-resistance) to the off (high-resistance) state is studied for programmable metallization cell nonvolatile memories. The stability of the on state under stress voltage and the erase operation were characterized as a function of the initial resistance in the timescale from 100 mus to 100 s. The data suggest that the on-off transition is limited by voltage-driven ion hopping and that filaments with larger size, and hence lower resistance, are more stable. Finally, results are discussed with the aid of an analytical model for erase, which is also used to address the tradeoff between on-state stability and program/erase currents.

Keywords

random-access storage; ON-state stability; initial resistance; programmable metallization cell nonvolatile memories; time 100 mus to 100 s; voltage-driven ion hopping; voltage-driven on-off transition; on-state stability; Conductive bridging RAM (CBRAM); ionic conduction; nonvolatile memory; programmable metallization cell (PMC); reliability modeling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2016991

Filename

4812051