Constant-current circuit-biasing technology for GaAs FET IC

Author

Kotera, Nobuo ; Yamashita, Kiichi ; Kitamura, Keiichi ; Hatta, Yasushi

Author_Institution

Dept. of Comput. Sci. & Electron., Kyushu Inst. of Technol., Fukuoka, Japan

Volume

30

Issue

1

fYear

1995

fDate

1/1/1995 12:00:00 AM

Firstpage

61

Lastpage

64

Abstract

A new constant-current biasing technology has been proposed, analyzed, and applied to GaAs FET IC´s using n-channel depletion-mode FET´s. Current-mirror (CM) type current-sink (CS) circuits were proposed as a new building-block circuit. The monolithic prototype samples were fabricated, and the CM characteristics were observed experimentally. The CS currents were insensitive to the V_th-variation over 0.4 V, and the temperature coefficient became as small as -0.04%/°C. Moreover, this circuit was resistant to the sidegating effect. The circuit was successfully applied to a GaAs lightwave communication IC, and good stability against temperature variation was demonstrated

Keywords

III-V semiconductors; circuit stability; constant current sources; field effect analogue integrated circuits; gallium arsenide; integrated circuit technology; optical communication equipment; 0.4 V; GaAs; GaAs FET IC; constant-current circuit-biasing technology; current-mirror current-sink circuits; lightwave communication IC; n-channel depletion-mode FET; sidegating effect; temperature coefficient; temperature variation stability; Circuit stability; FET integrated circuits; Fabrication; Gallium arsenide; HEMTs; MESFETs; Mirrors; Prototypes; Temperature distribution; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.350193

Filename

350193