DocumentCode :
1229200
Title :
Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High- 
Gate Dielectric Material
Author :
Raval, Harshil Narendra ; Tiwari, Shree Prakash ; Navan, Ramesh R. ; Mhaisalkar, Subodh G. ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Volume :
30
Issue :
5
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
484
Lastpage :
486
Abstract :
In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the bootstrapped inverter showing good results with a dc gain (A v) of - 1.7 and V OH and V OL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.
Keywords :
bootstrap circuits; dielectric materials; invertors; organic field effect transistors; P3HT; bootstrapping technique; high-k gate dielectric material; organic field-effect transistors; poly(3-hexylthiophene); solution-processed bootstrapped organic inverters; voltage 0.35 V; voltage 3.3 V; Bootstrapping; high-$k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2016679
Filename :
4812067
Link To Document :
