Title :
Total ionizing dose effects in MOS oxides and devices
Author :
Oldham, T.R. ; McLean, F.B.
Author_Institution :
NASA Goddard Space Flight Center/QSS Group, Greenbelt, MD, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.
Keywords :
CMOS analogue integrated circuits; nuclear electronics; radiation effects; radiation monitoring; CMOS; MOS oxides; charge generation; circuit effects; detrapping; interface trap formation; radiation effects; total ionizing dose effects; transport; trapping; Aerospace electronics; Books; CMOS technology; Charge carrier processes; Circuits; Electron traps; Ionizing radiation; NASA; Space technology; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.812927
