Title :
Total ionizing dose effects in bipolar devices and circuits
Author_Institution :
RLP Res., Los Lunas, NM, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
The development of the investigation of total dose effects in bipolar devices and circuits is covered over the past 40 years. There are at least four chronological stages in this field of study highlighted by the early studies on discrete transistors, the effects of total dose on linear circuits and I2L, the effects of total dose on recessed field oxide digital circuits and, most recently, the low dose rate sensitivity of bipolar linear circuits.
Keywords :
field effect transistor circuits; gamma-ray effects; nuclear electronics; radiation monitoring; transistors; 40 y; bipolar devices; bipolar linear circuits; discrete transistors; gamma radiation; low dose rate sensitivity; recessed field oxide digital circuits; total ionizing dose effects; Annealing; Artificial satellites; Belts; Ionizing radiation; Leakage current; Linear circuits; Protons; Silicon; Space technology; Surface contamination;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.813133
