• DocumentCode
    1229538
  • Title

    Total ionizing dose effects in bipolar devices and circuits

  • Author

    Pease, R.L.

  • Author_Institution
    RLP Res., Los Lunas, NM, USA
  • Volume
    50
  • Issue
    3
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    539
  • Lastpage
    551
  • Abstract
    The development of the investigation of total dose effects in bipolar devices and circuits is covered over the past 40 years. There are at least four chronological stages in this field of study highlighted by the early studies on discrete transistors, the effects of total dose on linear circuits and I2L, the effects of total dose on recessed field oxide digital circuits and, most recently, the low dose rate sensitivity of bipolar linear circuits.
  • Keywords
    field effect transistor circuits; gamma-ray effects; nuclear electronics; radiation monitoring; transistors; 40 y; bipolar devices; bipolar linear circuits; discrete transistors; gamma radiation; low dose rate sensitivity; recessed field oxide digital circuits; total ionizing dose effects; Annealing; Artificial satellites; Belts; Ionizing radiation; Leakage current; Linear circuits; Protons; Silicon; Space technology; Surface contamination;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.813133
  • Filename
    1208575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1229538