• DocumentCode
    1229559
  • Title

    Transient ionizing radiation effects in devices and circuits

  • Author

    Alexander, David R.

  • Author_Institution
    Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA
  • Volume
    50
  • Issue
    3
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    565
  • Lastpage
    582
  • Abstract
    A review and summary of over 40 years of research and development in the investigation of transient ionizing radiation effects in devices and circuits is presented. Emphasis is placed on the relationship of circuit effects to physical mechanisms at the transistor and diode level.
  • Keywords
    MOSFET; radiation effects; radiation monitoring; 40 y; circuit effects; diode level; microcircuits; nuclear test; photocurrent; transient ionizing radiation effects; Circuits; Collaboration; Diodes; Instruments; Ionizing radiation; Photoconductivity; Radiation effects; Recruitment; Testing; Transient response;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.813136
  • Filename
    1208577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1229559