Title :
Historical perspective on radiation effects in III-V devices
Author :
Weatherford, Todd R. ; Anderson, Wallace T., Jr.
Author_Institution :
Naval Postgraduate Sch., Monterey, CA, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
A historical review of radiation effects on III-V semiconductor devices is presented. The discussion ranges from examining early material and device studies to present-day understanding of III-V radiation effects. The purpose of this paper is to provide present researchers with a summary of discoveries and lessons learned from previous failures and successes.
Keywords :
III-V semiconductors; gallium arsenide; nuclear electronics; radiation effects; semiconductor devices; GaAs; III-V devices; compound semiconductor; gallium arsenide; radiation effects; semiconductor devices; FETs; Gallium arsenide; III-V semiconductor materials; Ionization; Neutrons; Radiation effects; Semiconductor devices; Silicon; Substrates; Weapons;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.813124
