Title :
The p-Germanium Transistor
Author :
Pfann, W.G. ; Scaff, J.H.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N.J.
Abstract :
The transistor effect in p-type germanium is discussed and some properties are given for p-germanium transistors made in the laboratory. These exhibit higher cutoff frequency and somewhat lower current multiplication than their n-germanium counterparts. Under certain conditions a negative resistance "snap" effect is observed which is apparently peculiar to p-type germanium. Both types of transistor are governed by the same physical principles but they differ in the signs of the emitted carriers and of the bias voltages.
Keywords :
Conductivity; Cutoff frequency; Electrodes; Germanium; Laboratories; Lattices; Metal-insulator structures; Semiconductor materials; Silicon; Voltage;
Journal_Title :
Proceedings of the IRE
DOI :
10.1109/JRPROC.1950.233109
