DocumentCode :
123017
Title :
Exploiting static and dynamic locality of timing errors in robust L1 cache design
Author :
Hu Chen ; Roy, Sandip ; Chakraborty, Koushik
Author_Institution :
BRIDGE Lab., Utah State Univ., Logan, UT, USA
fYear :
2014
fDate :
3-5 March 2014
Firstpage :
9
Lastpage :
15
Abstract :
The Process-Variation (PV) effect is a major reliability concern in semiconductor industry as the technology node continues shrinking. As the crucial component in modern processors, cache is vulnerable to PV-induced timing-errors due to its large scale while low logic path depth. To tolerate this timing-error in cache, asymmetric pipelining has been employed, which has low implementation costs while induces unnecessary latency overhead thus degrades the performance of the whole processor. In this paper, we proposes a novel approach to apply variable latency in L1 cache access thus significantly reduce the performance overhead in tolerating the PV-induced timing-errors. Our results show that the performance loss of our approach on processors with low, medium and high error_rate L1 cache is 0.1%, 1.5% and 3.5%, respectively. While the area and power overhead of our approach is 3.1% and 2.8%.
Keywords :
cache storage; integrated circuit reliability; PV effect; PV-induced timing-errors; asymmetric pipelining; dynamic locality; high-error rate L1 cache; implementation cost; latency overhead; logic path depth; low-error rate L1 cache; medium-error rate L1 cache; modern processor; performance overhead reduction; power overhead; process-variation effect; reliability concern; robust L1 cache design; semiconductor industry; static locality; technology node; timing errors; Benchmark testing; Delays; Error analysis; Pipelines; Program processors; Registers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2014 15th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4799-3945-9
Type :
conf
DOI :
10.1109/ISQED.2014.6783300
Filename :
6783300
Link To Document :
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